Paper
17 July 1979 Wafer Flatness: An Overview Of Measurement Considerations And Equipment Correlation
David C. Guidici
Author Affiliations +
Abstract
The trend toward smaller device geometries to afford more die per wafer and the advances in photolithographic technology have resulted in the evergrowing use of projection printing systems which can routinely produce two micron lines. Image distortion has become critical and because it is difficult to compensate for a lack of flatness by either mechanical or optical means, wafer flatness has been afforded increasing importance as a silicon material parameter. This paper will offer an overview of the most typical wafer flatness test methods. It will demonstrate the importance of contamination considerations, show how flatness measurements are affected by vacuum chuck geometries, inches of mercury of clamping vacuum and review currently available equipment. Also, principles of operation are described and the scanning, and laser interferometric testing systems.
© (1979) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David C. Guidici "Wafer Flatness: An Overview Of Measurement Considerations And Equipment Correlation", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957188
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Cited by 3 scholarly publications.
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KEYWORDS
Semiconducting wafers

Capacitance

Group IV semiconductors

Semiconductors

Mercury

Optical lithography

Interferometers

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