Influence Of Partial Coherence On Projection Printing

M. M. O'Toole; A. R. Neureuther

doi:10.1117/12.957174

17 July 1979 Influence Of Partial Coherence On Projection Printing

M. M. O'Toole, A. R. Neureuther

Proceedings Volume 0174, Developments in Semiconductor Microlithography IV; (1979) https://doi.org/10.1117/12.957174
Event: Developments in Semiconductor Microlithography IV, 1979, San Jose, United States

Abstract

A computer program for the Simulation And Modeling of Profiles for Lithography and Etching (SAMPLE) is used to explore the effects of partially coherent mask illumination on the image intensity distribution and on the developed resist profiles. Features of the image are discussed with respect to the degree of illumination coherence and to focus error. The impact of the image features on line-edge profiles in resist is explored via a resist development simulation. The minimum (toe) intensity of the image of narrow lines is defined and found to be an important factor in the control of resist linewidth. Simulated resist profiles of a typical mask pattern indicate a reasonable value of .7 for the partial coherence parameter o.

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M. M. O'Toole and A. R. Neureuther "Influence Of Partial Coherence On Projection Printing", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957174

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