E-Beam Lithography Field Abutment Characterization Using A Surface Acoustic Wave (SAW) Spatial Converter

D. B. MacDonald; R. C. Vail

doi:10.1117/12.957184

17 July 1979 E-Beam Lithography Field Abutment Characterization Using A Surface Acoustic Wave (SAW) Spatial Converter

D. B. MacDonald, R. C. Vail

Proceedings Volume 0174, Developments in Semiconductor Microlithography IV; (1979) https://doi.org/10.1117/12.957184
Event: Developments in Semiconductor Microlithography IV, 1979, San Jose, United States

Abstract

A novel surface acoustic wave (SAW) structure was developed which accurately measures the abutment between adjacent electron beam field patterns. The construction of large devices (ICs or SAWs) requires a mosaic consisting of many smaller 60 mil fields to cover a six inch photomask. ()System software acquires field edge alignment marks with tolerance increments of +125 A. The SAW device examined converts a spatial error of 1 microinch (0.025 micron) into a frequency difference of 65 kHz. This variation is easily measured with great precision in the frequency domain using an electronic counter. The SAW geometry is a simple test pattern which is easily reproduced on most electron beam pattern generators and consists of a single level of metallization on a piezoelectric substrate. A second SAW 5 us pulse compression filter was constructed in 16 consecutive fields and analyzed with regard to abutment errors. Misalignment could be detected from the filter's time domain impulse response.

Citation Download Citation

D. B. MacDonald and R. C. Vail "E-Beam Lithography Field Abutment Characterization Using A Surface Acoustic Wave (SAW) Spatial Converter", Proc. SPIE 0174, Developments in Semiconductor Microlithography IV, (17 July 1979); https://doi.org/10.1117/12.957184

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KEYWORDS

Transducers

Acoustics

Semiconductors

Group IV semiconductors

Electrodes

Electron beam lithography

Optical lithography

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