Practical Aspects Of Contact/Proximity, Photomask/Wafer Exposure

Richard C. Heim

doi:10.1117/12.955360

8 August 1977 Practical Aspects Of Contact/Proximity, Photomask/Wafer Exposure

Richard C. Heim

Proceedings Volume 0100, Developments in Semiconductor Microlithography II; (1977) https://doi.org/10.1117/12.955360
Event: Developments in Semiconductor Microlithography II, 1977, San Jose, United States

Abstract

Present contact masking techniques for integrated circuit manufacturing causes progressive deterioration of the mask through physical damage and particle contamination. The deterioration of the mask during the contact printing operation makes it necessary to generate many mask replications, a process which is both expensive and error prone. The comparatively recent introduction of the off-contact or proximity printing technique offers a solution under certain circumstances to the undesirable aspects of contact printing and the high cost of frequent mask replacement. Off-contact printing, as the name implies, is a procedure requiring the mask and wafer to be separated by an amount just sufficient to avoid physical contact. With the mask and wafer so positioned, the wafer is photo-etched by transilluminating the mask with an optical system having rather special characteristics. In this report, the technical aspects of the off-contact printing operation are explored, particularly as they relate to the optical design of the illumination system. Two candidate illumination systems are contrasted and the results of a trade-off analysis given.

Citation Download Citation

Richard C. Heim "Practical Aspects Of Contact/Proximity, Photomask/Wafer Exposure", Proc. SPIE 0100, Developments in Semiconductor Microlithography II, (8 August 1977); https://doi.org/10.1117/12.955360

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