Presentation
14 March 2023 III-N materials for UV light emitters: from atomistic structure to optical properties (Conference Presentation)
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Abstract
Semiconductor heterostructures utilizing the III-N material aluminium nitride (AlN) have attracted significant interest for optoelectronic device applications in the ultraviolet (UV) spectral range. We will discussion the impact of alloy fluctuations on the electronic and optical properties of (Al,Ga)N and (Al,In)N materials by means of atomistic theoretical studies. Moreover, we present a theoretical analysis of the impact of random alloy fluctuations on the electronic and optical properties of c-plane (Al,Ga)N/AlN quantum wells. Finally, we will give an outlook for potential ways to tailor the electronic and optical properties of UV light emitters by utilizing for instance boron containing III-N alloys.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Schulz "III-N materials for UV light emitters: from atomistic structure to optical properties (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC1244106 (14 March 2023); https://doi.org/10.1117/12.2647961
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KEYWORDS
Ultraviolet radiation

Optical properties

Quantum wells

Light emitting diodes

Aluminum nitride

Deep ultraviolet

Aluminum

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