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16 March 2023 Materials development for high voltage vertical gallium oxide devices (Conference Presentation)
James S. Speck
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Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC124220G (2023) https://doi.org/10.1117/12.2662107
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Beta-Ga2O3 has emerged as a new semiconductor for high voltage diodes and transistors. Progress in this field has been rapid due to the availability of high quality melt grown substrates. In this talk we present the progress in epitaxial growth by MBE and MOCVD. We address materials purity, which now has demonstrated unintentional compensating impurity concentrations N_A < 10**14 cm-3, controlled donor doping from <10**16 cm-3 to ~10**19 cm-3; intentional compensation doping by Mg or Fe; controllable wet etching with phosphoric acid; outstanding ohmic contacts; Schottky contacts with near ideal diode behavior and barrier heights in excess of 2 eV. In this talk we also present work from our group on high voltage vertical Schottky diodes with punch-through structures with average electric fields >2 MV/cm.
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James S. Speck "Materials development for high voltage vertical gallium oxide devices (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC124220G (16 March 2023); https://doi.org/10.1117/12.2662107
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KEYWORDS
Gallium
Oxides
Ionization
Semiconductors
Switching
Diodes
Doping
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