Spin-dependent photocurrent in ferromagnetic metal / semiconductor tunnel junctions (Conference Presentation)

Henri-Jean Drouhin; Viatcheslav I. Safarov; Igor V. Rozhansky; Henri Jaffrès; Yuan Lu

doi:10.1117/12.2635866

4 October 2022 Spin-dependent photocurrent in ferromagnetic metal / semiconductor tunnel junctions (Conference Presentation)

Henri-Jean Drouhin, Viatcheslav I. Safarov, Igor V. Rozhansky, Henri Jaffrès, Yuan Lu

Author Affiliations +

Proceedings Volume PC12205, Spintronics XV; PC122050H (2022) https://doi.org/10.1117/12.2635866
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States

Abstract

Spin optoelectronics has the ability to interconvert photon spins to electrical charges and may revolutionize information processing. Circularly-polarized photon sources rely on spin lasers whereas reciprocal devices are solid-state helicity detectors, the fabrication of which has remained a challenge for decades. Experimental results obtained on a ferromagnetic CoFeB/MgO/III-V semiconductor tunnel diode will be presented. We show that the helicity-dependent photocurrent is mostly determined by a dynamical factor resulting from the competition between carrier recombination in the metal and in the semiconductor. This constitutes a radical shift in the description of these emerging spin devices.

Conference Presentation

Citation Download Citation

Henri-Jean Drouhin, Viatcheslav I. Safarov, Igor V. Rozhansky, Henri Jaffrès, and Yuan Lu "Spin-dependent photocurrent in ferromagnetic metal / semiconductor tunnel junctions (Conference Presentation)", Proc. SPIE PC12205, Spintronics XV, PC122050H (4 October 2022); https://doi.org/10.1117/12.2635866

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