Gate-tunable 2D material-based plasmonic phototransistors with ultrahigh photoresponsivity (Conference Presentation)

Yu-Jung Lu

doi:10.1117/12.2632945

3 October 2022 Gate-tunable 2D material-based plasmonic phototransistors with ultrahigh photoresponsivity (Conference Presentation)

Yu-Jung Lu

Author Affiliations +

Proceedings Volume PC12195, Metamaterials, Metadevices, and Metasystems 2022; PC121950N (2022) https://doi.org/10.1117/12.2632945
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States

Abstract

Monolayer transition metal dichalcogenides (TMDs) with an atomically thin nature are promising materials for electronics and photonics, especially at highly scaled lateral dimensions. However, the characteristically low total absorption of photons in the monolayer TMD has become a challenge in the access to and realization of monolayer TMD-based high-performance optoelectronic functionalities and devices. Here, we report gate-tunable plasmonic phototransistors (photoFETs) that consist of monolayer molybdenum disulfide (MoS2) photoFETs integrated with the two-dimensional plasmonic crystals. The plasmonic photoFET has an ultrahigh photoresponsivity achieving a 7.2-fold enhancement in the photocurrent compared to pristine 2D material-based photoFETs. The achievement is based on the breakthrough of the realization and characterization of a gate-tunable atomistically-thin phototransistor device consisting of a monolayer MoS2 photoFET integrated with a two-dimensional (2D) plasmonic crystal to enhance the light absorption rate, photo-carrier generation rate, photo-gating, and hot-carrier transfer rate. Moreover, this talk will describe different design of plasmonic phototransistors that is extensible to other types of 2D materials for ultrathin high-performance optoelectronic devices at highly scaled dimensions. Finally, we will discuss prospects for next-generation ultra-compact optoelectronic devices in the trans-Moore era.

Conference Presentation

Citation Download Citation

Yu-Jung Lu "Gate-tunable 2D material-based plasmonic phototransistors with ultrahigh photoresponsivity (Conference Presentation)", Proc. SPIE PC12195, Metamaterials, Metadevices, and Metasystems 2022, PC121950N (3 October 2022); https://doi.org/10.1117/12.2632945

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Plasmonics

Phototransistors

Optoelectronic devices

Absorption

Crystals

Molybdenum

Optoelectronics

Show All Keywords

Keywords/Phrases

Search In:

Publication Years