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21 March 2023 Fabrication of 265 nm LED on face-to-face annealed sputter-deposited AlN/sapphire
Hideto Miyake
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2651747
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
To fabricate deep-ultraviolet(DUV)-LEDs with high efficiency, the crystallinity of AlGaN must be improved, and is significantly influenced by that of the underlying AlN template. The face-to-face annealed sputter-deposited AlN templates (FFA Sp-AlN) have achieved one order of magnitude lower TDD than that of the typical MOVPE-grown AlN on sapphire substrates. The EQE of the UV-C LED fabricated on FFA Sp-AlN increased with the TDD reduction of the FFA Sp-AlN. Maximum EQE of 8.0% and output power of 6.6 mW at a 20-mA input were achieved with the peak emission wavelength of 263 nm.
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Hideto Miyake "Fabrication of 265 nm LED on face-to-face annealed sputter-deposited AlN/sapphire", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2651747
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KEYWORDS
Aluminum nitride
Light emitting diodes
External quantum efficiency
Annealing
Crystals
Sapphire
Sputter deposition
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