Volume Table of Contents

PROCEEDINGS VOLUME 1523

CONFERENCE ON PHYSICS AND TECHNOLOGY OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS | 1-28 FEBRUARY 1992

Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits

Editor(s): B. S. V. Gopalam, J. Majhi

Editor Affiliations +

IN THIS VOLUME

13 Sessions, 90 Papers, 0 Presentations

Semiconductor Device Performance-Related Effects (5)

II-V, II-VI Compounds I (4)

II-V, II-VI Compounds II (11)

Solar Cells (6)

Surfaces, Interfaces, and Related Devices (8)

Photovoltaic Effects (7)

New Materials and Characterization (9)

Late Submissions II (8)

III-V Compounds and Quantum-Well Structures I (3)

III-V Compounds and Quantum-Well Structures II (5)

Amorphous and Polycrystalline Semiconductors (13)

Late Submissions I (5)

Late Submissions III (6)

CONFERENCE ON PHYSICS AND TECHNOLOGY OF SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS

1-28 February 1992

Madras, India

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Semiconductor Device Performance-Related Effects

Shubnikov-de Haas effect in II-V semiconducting compounds Paper

J. Cisowski

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56958

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II-V, II-VI Compounds I

Fundamental optical properties of Zn₃P₂ Paper

Jan Misiewicz

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56959

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II-V, II-VI Compounds II

Preparation and characterization of pulse-plated CdSe films Paper

K. R. Murali, V. Subramanian, N. Rangarajan, A. S. Lakshmanan, S. K. Rangarajan

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56960

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Solar Cells

Thin film photoelectrodes of ternary chalcogenide CdSe_1-xTe_x for photoelectrochemical solar cells applications Paper

V. Damodara Das

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56961

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Surfaces, Interfaces, and Related Devices

Analytical modeling of the channel-charge in ion-implanted MOSFETs and MESFETs Paper

S. Karmalkar, Kunchinadka Narayana Hari Bhat

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56962

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Photovoltaic Effects

Influence of dopants on the electrical transport properties of Pb_0.8Sn_0.2Te thin films Paper

Pawan Sikka

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56963

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Solar Cells

Studies on ITO/Si junctions prepared by spray pyrolysis technique Paper

A. Subrahmanyam, V. Vasu

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56964

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Photovoltaic Effects

Investigations on surface passivated CdS and Cds:As-based photoelectrochemical cells Paper

Lalasaheb P. Deshmukh, D. S. Hulle, P. P. Hankare, A. H. Manikshete

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56965

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New Materials and Characterization

Electrical, magnetic, and thermal properties of ternary A₂B₂O₇ pyrochlores: a family of magnetic semiconductors Paper

G. Rangarajan, Narayani Senthilkumaran, N. P. Raju, E. Gmelin, R. K. Kremer

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56966

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Semiconductor Device Performance-Related Effects

High-field-induced hot-carrier temperature, bandgap narrowing, and carrier multiplication in bulk semiconductors Paper

Vijay K. Arora, Hiroyuki Sakaki

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56977

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New Materials and Characterization

Organometallic molecular precursors for low-temperature MOCVD of III-V semiconductors Paper

F. Maury

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56987

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II-V, II-VI Compounds I

Characterization of SnSe films for device applications Paper

R. K. Bedi

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56997

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Late Submissions II

Some aspects of CdTe Paper

Shyam Singh

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56999

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II-V, II-VI Compounds I

Vapour phase growth and characterization of II-VI mixed crystals Paper

D. R. Reddy, B. K. Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57000

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All II-VI semiconductors with melting temperatures well above 1000 degree(s)C and with appreciable congruent vaporization well below their melting temperatures leave little scope for any growth technique except for the slow but efficient vaporphase growth method. Theoretical flaw in diffusion models of vapor phase growth was corrected by Factor and Garrett by incorporating the flow velocity term which otherwise would lead to segregation of constituents. An additional degree of freedom arising from the presence of two components was well utilized to finely control the stoichiometry in binaries. In mixed II-VI systems the components are either three or four, depending on whether the system is a ternary or a quaternary. The added degrees of freedom make it very difficult to control stoichiometry. However, Igaki et al. demonstrated the feasibility of control of stoichiometry in CdS_xSe_1-x. In this paper, a self-sealing vaporphase growth technique used for both ternary and quaternary system is described. The systems studied are CdS_xSe_1-x, (ZnSe)_x(CdTe)_1-x and (ZnTe)_x(CdSe)_1-x. Results on growth mechanism, miscibility, structure, band gap variation, conductivity type variation with 'x' and transport properties are presented in a comparative way and discussed. CdS_xSe_1-x system in the entire 'X' has the same crystal structure and type of conductivity. The second system has the same zincblend structure but the type of conductivity is very sensitive to thermal treatment. In the last system both structure and types of conductivity are different. The discontinuities in properties associated with this divergent end compound are presented and discussed. Among the physical properties/parameters studied crystal structure, bandgap and nature of conductivity are tailorable, and magnitudes of conductivity and dielectric properties are very difficult to control in the crystals grown by this vapor phase method.

III-V Compounds and Quantum-Well Structures I

Quantum-well injection transit time device Paper

B. B. Pal, R. U. Khan

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57001

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Semiconductor Device Performance-Related Effects

Physics of overstress-related failures in semiconductor devices Paper

M. K. Radhakrishnan, M. Natarajan

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57002

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II-V, II-VI Compounds II

Window coating prospects of Cu₂Se thin films Paper

M. Pattabi, P. J. Sebastian, V. Sivaramakrishnan

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57003

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Aging characteristics of CdSe thin films at low temperatures Paper

P. J. Sebastian, V. Sivaramakrishnan

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57004

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III-V Compounds and Quantum-Well Structures II

Electrical properties of indium antimony films Paper

Surinder Kaur, Taminder Singh, R. K. Bedi

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57006

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II-V, II-VI Compounds II

Study on flash-evaporated tin selenide films Paper

Taminder Singh, Surinder Kaur, R. K. Bedi

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57007

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New Materials and Characterization

Electrical resistance variation in Se(10)Sb(10)Te(80) ternary semiconductor thin films Paper

V. Damodara Das, S. Aruna, K. S. Raju

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57008

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Amorphous and Polycrystalline Semiconductors

Electrical transport in some polymetallo phthalocyanines Paper

Anasuya Raghunathan, T. S. Natarajan, G. Rangarajan, S. Venkatachalam, P. T. Manoharan

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57009

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Surfaces, Interfaces, and Related Devices

Ultrathin oxide (SiO_x) grown on HF-treated silicon Paper

E. T. Paul Benny, J. Majhi

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57010

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Amorphous and Polycrystalline Semiconductors

Dc and ac conductivity of amorphous CuInTe₂ thin films Paper

S. Kasi Viswanathan, F. M. Amanullah, S. S.V. Avadhani, B. S. V. Gopalam

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57011

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Amorphous CuInTe₂ thin films Paper

S. Kasi Viswanathan, F. M. Amanullah, S. S.V. Avadhani, B. S. V. Gopalam

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57012

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Late Submissions II

Growth of silicon nitride by PECVD Paper

V. Jayan, Dev Alok, P. R. Vaya

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57013

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Kinetics of thermal donors and new oxygen donors in silicon Paper

D. Tandon, Shyam Singh

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57014

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II-V, II-VI Compounds II

Zn₃P₂ as a material for optoelectronics devices Paper

Jan Misiewicz, Jan Szatkowski, Nella Mirowska, Zbigniew Gumienny, Ewa Placzek-Popko

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57015

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Late Submissions I

Postbreakdown behaviour of metal-oxide-semiconductor diodes Paper

K. S. Gurumurthy, Krishnaswamy Ramkumar, M. Satyam

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57016

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II-V, II-VI Compounds II

Electrical and optical properties of CuGa_0.5In_0.5Se₂ thin films Paper

Y. Aparna, P. S. Reddy, B. Srinivasulu Naidu

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57017

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Amorphous and Polycrystalline Semiconductors

Characterization of hydrogenated amorphous silicon carbide films Paper

S. Uthanna

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57018

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Photovoltaic Effects

Photovoltaic properties of Zn_xCd_1-xS/CuGaSe₂ thin film solar cells Paper

K. T. Ramakri Reddy, P. Jayarama Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57019

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Tools for defect characterization in semiconductor devices: EBIC and voltage contrast Paper

M. Natarajan, V. K. Vaidyan, M. K. Radhakrishnan

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57020

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Amorphous and Polycrystalline Semiconductors

Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon Paper

Dharmendra P. Singh, P. S. Basak

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57021

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New Materials and Characterization

Hydrogenation effects on Ni/n-Si(111) Schottky diode characteristics Paper

P. P. Sahay, M. Shamsuddin, R. S. Srivastava

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57022

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III-V Compounds and Quantum-Well Structures II

Transport properties of semiconducting Ga_xIn_1-xSb solid solutions Paper

T. K. Silva P Gupta, P. P. Sahay, M. Shamsuddin, P. Ramachandrarao

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57023

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Amorphous and Polycrystalline Semiconductors

Electronic conduction and density of states in Pb-modified amorphous germanium sulfide semiconductors Paper

S. K. Malik, K. L. Bhatia

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57024

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Surfaces, Interfaces, and Related Devices

Solar Cells

Studies on semiconducting samarium-sulphide electrolyte junction cells Paper

S. B. Jundale, C. D. Lokhande

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57027

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Amorphous and Polycrystalline Semiconductors

Concentration dependence of diffusivity in polysilicon Paper

M. R. Murti, K. V. Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57028

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Photovoltaic Effects

Chemical deposition of large-area silver sulphide films Paper

S. S. Dhumure, C. D. Lokhande

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57029

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Solar Cells

Microprocessor-based PID controller for low-temperature studies Paper

S. V. Pandu Rangaiah, P. N. Reddy, B. P. Nagi Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.145060

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Photovoltaic Effects

Development of a process simulator for optical waveguide fabrication by ion exchange in glass Paper

Sushila Singh, Bipin K. Singh, Arvind D. Shaligram

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57031

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New Materials and Characterization

Positron lifetime studies of Al-Si Ohmic contact formed by rapid thermal processing Paper

Revati N. Kulkarni, N. M. Kulkarni, Arvind D. Shaligram

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57032

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II-V, II-VI Compounds I

Electrical and optical properties of pure and silver-doped zinc telluride films Paper

N. Umamaheswa Reddy, S. Uthanna, P. Jayarama Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57033

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Amorphous and Polycrystalline Semiconductors

Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films Paper

S. S.V. Avadhani, S. Kasi Viswanathan, B. S. V. Gopalam

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57034

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Late Submissions II

Polarizabilities in the study of optical properties of semiconductors Paper

V. Ramamurthy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57035

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Properties of spray pyrolysed SnO₂:Sb films Paper

A. Arulgnanam, S. Balachandran, A. Balasubramanian

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57036

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Chemical spray deposition of CuGaS₂ thin films Paper

K. Subbaramaiah, V. Sundara Raja

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57037

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III-V Compounds and Quantum-Well Structures II

Properties of 35-GHz InP DDR Paper

Shankar P. Pati, J. P. Banerjee, S. K. Ray

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57038

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Exciton mobility in a GaAs/AlGaAs quantum well Paper

Partha Ray, P. K. Basu

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57039

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Late Submissions I

Electrical properties of Cd_0.3Ni_0.7+xMn_xFe₂O₄ ferrites Paper

M. G. Patil, V. C. Mahajan, B. V. Bhise, S. M. Chandake, B. L. Patil, A. B. Patil, S. R. Sawant, S. A. Patil

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57040

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Tetravalent titanium addition to copper ferrite electrical properties Paper

B. L. Patil, A. B. Patil, M. G. Patil, V. C. Mahajan, B. V. Bhise, S. M. Chandake, S. R. Sawant, S. A. Patil

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57041

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III-V Compounds and Quantum-Well Structures I

Photonic device applications of quantum-well structures: role of particle scattering on device performance Paper

P. K. Basu

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56967

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II-V, II-VI Compounds II

Thermal analysis of (ZnTe)_x(CdSe)_1-x crystals Paper

V. K. Madhusm Rani, R. P. Vijaya Lakshmi, D. R. Reddy, B. K. Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56968

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Dielectric behaviour of (ZnTe)_x(CdSe)_1-x single crystals Paper

V. K. Madhusm Rani, R. P. Vijaya Lakshmi, D. R. Reddy, B. K. Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56969

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Variation of bandgap with composition in (ZnTe)_x(CdSe)_1-x single crystals Paper

V. K. Madhusm Rani, R. P. Vijaya Lakshmi, D. R. Reddy, B. K. Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56970

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Preparation and characterization of Mn-doped sprayed p-CuInS₂ films Paper

R. P. Vijaya Lakshmi, D. R. Reddy, B. K. Reddy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56971

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Semiconductor Device Performance-Related Effects

Effect of carrier diffusion on the breakdown characteristics of avalanche diodes Paper

J. P. Banerjee, R. Mukherjee, M. Mitra, S. K. Ray

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56972

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New Materials and Characterization

Nonexponential transition rates from deep levels Paper

Andrew K. Jonscher

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56973

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Mechanism of etching of silicon-based materials in a reactive plasma Paper

Vayalakkara Premachandran

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56974

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Ferroelectric integrated optics and semiconductor memory devices Paper

H. Tiwary

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56975

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Electrical characterization of the reactive-ion-etch-induced damages in silicon Paper

N. Ramadas, Vayalakkara Premachandran

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56976

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Surfaces, Interfaces, and Related Devices

Solar Cells

New solar cell based on cooperative functioning of electrovoltaic and photovoltaic effects Paper

S. N. Singh

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56981

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Photovoltaic Effects

Electrical and optical properties of sprayed indium tin oxide films Paper

V. Vasu, A. Subrahmanyam

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56982

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Amorphous and Polycrystalline Semiconductors

Microstructure and electronic properties of amorphous semiconductors in the system Ge-S-Bi Paper

K. L. Bhatia

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56983

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Transport properties of Bi-doped Ge-Se glasses Paper

Pawan Sikka

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56984

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Kinematical studies of glass transition in Se_100-xTe_x by DSC technique Paper

P. Agarwal, J. S. P. Rai, A. Kumar

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56985

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Late Submissions I

Broadening of cyclotron resonance line of 2-D electron gas in a multiple-quantum-well structure Paper

M. P. Chaubey

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56986

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Surfaces, Interfaces, and Related Devices

Effect of ultrathin metal layers on the plasma anodization of GaAs Paper

Sh. Lanyi, E. Pincik, V. Nadazdy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56988

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III-V Compounds and Quantum-Well Structures I

n-i-p-i and hetero n-i-p-i doping superlattices physics and device applications Paper

Gottfried H. Doehler

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56989

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Artificial semiconductors compared of a periodic sequence of thin n- and p-doped layers, possibly with undoped (i-) layers in between, exhibit a number of unique features by which they differ from uniform bulk crystals as well as from semiconductors with a compositional superlattice. The properties which make them particularly appealing as a new kind of semiconductor are the tunability of carrier density, bandgap, two-dimensional subband structure, and recombination lifetime in combination with an enormous flexibility in tailoring. This tailoring includes the possibility of an additional periodic modulation of composition ('hetero n-i-p-i'). This can be used to reduce the disorder induced potential fluctuations by separating the free carriers from their parent impurity atoms, similar to the well-known 'modulation doping.' The possibility of varying conductivity, absorption coefficient, optical gain, and luminescence spectra by light or external electrical potentials implies new concepts for photodetectors, tunable light sources, and modulators. The long recombination lifetimes result in large, low-power nonlinearities of the optical absorption coefficient and the refractive index, including optical bistability. After a short review of the basic theory and fundamental properties of n-i-p-i structures we will demonstrate a number of properties which have turned out to be of particular interest for applications such as spectrally tunable electroluminescence, huge photoconductivity, strong electro-absorption and -refraction, and large optical non- linearities on homo- and hetero n-i-p-i systems. We also present results on a newly discovered peculiarity. N-i-p-i structures exhibit a giant ambipolar diffusion coefficient, which can exceed typical bulk values by more than two orders of magnitude and which allows for a control of the 'adjustable recombination lifetimes' down into the sub-ns regime. Finally we will present a new n-i-p-i-based concept of 'smart pixels' as fast optical logic gates at extremely low optical and electrical power dissipation.

Amorphous and Polycrystalline Semiconductors

Photostable amorphous-silicon films by low-pressure chemical vapour deposition Paper

K. K. Sharma, Claudio Manfredotti

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56990

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Semiconductor Device Performance-Related Effects

Spatial hole-burning effects in distributed-feedback semiconductor lasers Paper

Bernd Borchert

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56991

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III-V Compounds and Quantum-Well Structures II

Direct evidence for negative-U nature of DX center in Al_xGa_1-xAs Paper

Subhasis Ghosh, Vikram Kumar

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56992

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II-V, II-VI Compounds II

Effect of reversal of double-implantation schedule of boron in mercury cadmium telluride Paper

Rakesh Kumar, M. B. Dutt, R. Nath, Vishnu Gopal, Y. P. Khosla, K. K. Sharma

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56993

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Amorphous and Polycrystalline Semiconductors

Electronic transport processes in disordered semiconductors Paper

S. Summerfield

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56994

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Late Submissions I

Strain in semiconductor structures and devices Paper

David J. Dunstan, Alfred R. Adams

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56995

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Late Submissions II

Growth and XPS depth profiling of thermal oxides on polycrystalline GaAs thin films Paper

S. S.V. Avadhani, S. Kasi Viswanathan, B. S. V. Gopalam

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56996

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Solar Cells

Development and characterization of device grade thin films of compound semiconductors Paper

P. C. Mathur

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.56998

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Late Submissions II

Magnetotunneling effect in semiconductors: a clue to the measurement of tunneling time Paper

Dilip K. Roy

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.57005

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It has been observed experimentally that the tunneling current across pn tunnel diodes decreases when a magnetic field is applied to it at liquid helium temperatures. Such a decrease is noticed both for longitudinal and transverse applications of magnetic fields relative to the direction of the current flow. Classically, tunneling of particles is regarded to propagate with the speed of light. Therefore, on the basis of the postulates of special theory of relativity tunneling of a potential barrier by particles should be independent of the state of motion of an observer relative to the tunneling system. In other words, the tunneling rate should remain unaffected of the motion of the observer. Therefore, to explain tunneling of particles in a crossed configuration of electric and magnetic fields, a suitable frame of reference for an observer can always be chosen so that the magnetic flux density observed from the new frame reduces to zero. The tunneling along the reduced electric field intensity may then be studied on established laws. The resultant electric field intensity in such a case becomes a function of the original magnetic flux density and it shows a steady decline with the increase in the magnitude of the latter. Therefore, a reduction in the tunneling probability and the tunneling current density is expected when the magnetic flux density normal to the current flow is increased. Finally, at a particular magnetic field intensity the tunneling current density drops to zero. It then turns out that the cyclotron frequency corresponding to this cut off magnetic field is proportional to the reciprocal of the tunneling time derived on the ideas of quantum measurement and observations. Therefore, by recording the normal magnetic flux density required to cut off the tunneling current across pn tunnel diodes immersed in a liquid helium bath, it may be possible to make an estimate of the tunneling time across a potential barrier. The working expression of the calculation of the tunneling time also follows independently of the relativistic treatment outlined above. The identity of results derived on the two approaches seems to justify the fact that the speed Of tunneling is really high enough so that the relativistic treatments may be applied to it as an approximation although tunneling may not propagate with the exact speed of light.

Late Submissions III

Thin Film Solar Cells Based on Chalcogenides and Chalcopyrites Paper

E. Pfisterer, Hans Werner Schock

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.634080

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Diffusion Studies In Silicon Paper

Francois Beniere

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.634081

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Optical and Electrical Properties of II-VI Wide Gap Semiconducting Barium Suiphide Paper

D. R. Vij, Nahar Singh

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.634082

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Properties of GaAs : V Grown by Liquid Phase Epitaxy Paper

Sathya Balasubramanian, Vikram Kumar

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.634083

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Energy Loss Function for a GaAs/A1_x Ga_1-x As Superlattice Paper

A. C. Sharma

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.634084

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Electron Phonon Scattering and Phonon Conductivity in As-Doped Germanium Paper

M. K. Roy, K. N. Sood

Proceedings Volume Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1992) https://doi.org/10.1117/12.634085

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