Dr. Nancy M. Haegel Profile

Dr. Nancy M. Haegel

Center Director, Materials Science at National Renewable Energy Lab

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Author

Publications (12)

Proceedings Article | 22 May 2009 Paper

Transport imaging with near-field scanning optical microscopy

Nancy Haegel, Chun-Hong Low, Lee Baird, Goon-Hwee Ang

Proceedings Volume 7378, 73782B (2009) https://doi.org/10.1117/12.824114

KEYWORDS: Near field scanning optical microscopy, Diffusion, Luminescence, Scanning electron microscopy, Electron beams, Near field optics, Radiation effects, Gallium nitride, Optical microscopes, Nanowires

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Proceedings Article | 26 September 2007 Paper

Transients in stressed Ge:Ga photoconductors under high background for PACS

Jutta Stegmaier, Stephan Birkmann, Ulrich Grözinger, Nancy Haegel, Dietrich Lemke, Oliver Krause

Proceedings Volume 6678, 667808 (2007) https://doi.org/10.1117/12.734354

KEYWORDS: Sensors, Picture Archiving and Communication System, Photoresistors, Infrared radiation, Signal detection, Infrared sensors, Calibration, Crystals, Mirrors, Spectrometers

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Proceedings Article | 6 July 2006 Paper

Development of a GaAs-based BIB detector for sub-mm wavelengths

L. Reichertz, J. Beeman, B. Cardozo, G. Jakob, R. Katterloher, N. Haegel, E. Haller

Proceedings Volume 6275, 62751S (2006) https://doi.org/10.1117/12.673039

KEYWORDS: Gallium arsenide, Sensors, Doping, Photoresistors, Absorption, Semiconducting wafers, Detector development, Germanium, Multilayers, Interfaces

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Proceedings Article | 29 August 2005 Paper

First results on GaAs blocked impurity band (BIB) structures for far-infrared detector arrays

L. Reichertz, B. Cardozo, J. Beeman, D. Larsen, S. Tschanz, G. Jakob, R. Katterloher, N. Haegel, E. Haller

Proceedings Volume 5883, 58830Q (2005) https://doi.org/10.1117/12.620156

KEYWORDS: Gallium arsenide, Doping, Sensors, Photoresistors, Liquid phase epitaxy, Detector arrays, Absorption, Sulfur, Carbon, Far infrared

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Proceedings Article | 29 August 2005 Paper

Modeling the alternate bias configuration and low temperature C-V profiling in blocked impurity band detectors

S. Tschanz, J. Garcia, N. Haegel

Proceedings Volume 5883, 58830R (2005) https://doi.org/10.1117/12.623471

KEYWORDS: Doping, Interfaces, Profiling, Sensors, Capacitance, Gallium arsenide, Temperature metrology, Germanium, Instrument modeling, Silicon

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Proceedings Article | 4 November 2004 Paper

GaAs BIB photodetector development for far-infrared astronomy

Lothar Reichertz, Jeffrey Beeman, Benjamin Cardozo, Nancy Haegel, Eugene Haller, Gerd Jakob, Reinhard Katterloher

Proceedings Volume 5543, (2004) https://doi.org/10.1117/12.560291

KEYWORDS: Gallium arsenide, Sensors, Doping, Absorption, Liquid phase epitaxy, Photoresistors, Astronomy, Silicon, Detector arrays, Germanium

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Proceedings Article | 1 July 2003 Paper

BIB detector development for the far infrared: from Ge to GaAs

Nancy Haegel

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.479623

KEYWORDS: Doping, Sensors, Interfaces, Gallium arsenide, Photoresistors, Germanium, Silicon, Absorption, Far infrared, Infrared sensors

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Proceedings Article | 17 February 2003 Paper

Far-infrared photoconductor arrays for Herschel and SOFIA

Albrecht Poglitsch, Reinhard Katterloher, Rainer Hoenle, Jeffrey Beeman, Eugene Haller, Hilmar Richter, Ulrich Groezinger, Nancy Haegel, Alfred Krabbe

Proceedings Volume 4855, (2003) https://doi.org/10.1117/12.459184

KEYWORDS: Sensors, Gallium arsenide, Liquid phase epitaxy, Picture Archiving and Communication System, Photoresistors, Detector arrays, Quantum efficiency, Doping, Spectroscopy, Electronics

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Proceedings Article | 8 February 2002 Paper

Liquid phase epitaxy centrifuge for growth of ultrapure gallium arsenide for far-infrared photoconductors

Reinhard Katterloher, Gerd Jakob, Mitsuharu Konuma, Alfred Krabbe, Nancy Haegel, S. Samperi, Jeffrey Beeman, Eugene Haller

Proceedings Volume 4486, (2002) https://doi.org/10.1117/12.455132

KEYWORDS: Gallium arsenide, Liquid phase epitaxy, Sensors, Doping, Gallium, Infrared sensors, Photoresistors, Silicon, Absorption, Far infrared

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Proceedings Article | 13 November 1998 Paper

Numerical modeling of far-infrared detectors: behavior of conventional and blocked impurity band photoconductors

Nancy Haegel, James Jacobs, J. Simoes, A. White

Proceedings Volume 3465, (1998) https://doi.org/10.1117/12.331163

KEYWORDS: Sensors, Photoresistors, Doping, Information operations, Germanium, Numerical modeling, Instrument modeling, Performance modeling, Gallium arsenide, Silicon

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Proceedings Article | 21 August 1998 Paper

4x32 FIRGA array: a pacesetter for a 52x32-element gallium arsenide focal plane array

Reinhard Katterloher, Lothar Barl, Jeffrey Beeman, Erwin Czech, Detlef Engemann, Otto Frenzl, Nancy Haegel, Eugene Haller, Thomas Henning, Lou Hermans, Gerd Jakob, Mitsuharu Konuma, Goeran Pilbratt

Proceedings Volume 3354, (1998) https://doi.org/10.1117/12.317301

KEYWORDS: Sensors, Gallium arsenide, Infrared sensors, Cryogenics, Electronics, Photoresistors, Liquid phase epitaxy, Interfaces, Doping, Far infrared

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Proceedings Article | 18 August 1992 Paper

CdS-doped ormosils as nonlinear optical materials

Chia-Yen Li, Matthew Wilson, Nancy Haegel, John Mackenzie, Edward Knobbe, Cindy Porter, Roger Reeves

Proceedings Volume 1692, (1992) https://doi.org/10.1117/12.138064

KEYWORDS: Cadmium sulfide, Particles, Absorption, Semiconductors, Microcrystalline materials, Quantum dots, Luminescence, Sol-gels, Matrices, Waveguides

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Showing 5 of 12 publications

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