Reliability Of InGaAsP/lnP Light Emitting Diodes

John S. Ferrario

doi:10.1117/12.960060

26 April 1989 Reliability Of InGaAsPIInP Light Emitting Diodes

John S. Ferrario

Proceedings Volume 0992, Fiber Optics Reliability: Benign and Adverse Environments II; (1989) https://doi.org/10.1117/12.960060
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

InGaAsP/InP double heterostructure light-emitting diodes (LEDs) provide an excellent source for fiber optic transmitters because of the low transmission losses and minimal material dispersion in silica fibers, which is characteristic of 1.3 μm wavelength transmission. Life testing is performed on a line of commercially available LEDs at both DC and a typical pulse condition. Homogeneous degradation kinetics are derived for current and temperature acceleration.

Citation Download Citation

John S. Ferrario "Reliability Of InGaAsPIInP Light Emitting Diodes", Proc. SPIE 0992, Fiber Optics Reliability: Benign and Adverse Environments II, (26 April 1989); https://doi.org/10.1117/12.960060

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available