Paper
28 May 2004 Critical failure ORC: application to the 90-nm and 65-nm nodes
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Abstract
In this paper, we present a new technique (Critical Failure ORC or CF-ORC) to check the robustness of the structures created by OPC through the process window. The full methodology is explained and tested on a full chip at the 90- nm node. Improvements compared to standard ORC/MRC techniques will be presented on complex geometries. Finally, examples of concrete failure predictions are given and compared to experimental results.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerome Belledent, Shumay Dou Shang, Yorick Trouiller, Corinne Miramond, Kyle Patterson, Olivier R. Toublan, Christophe Couderc, Frank Sundermann, and Yves Fabien Rody "Critical failure ORC: application to the 90-nm and 65-nm nodes", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.537190
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CITATIONS
Cited by 4 scholarly publications and 3 patents.
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KEYWORDS
Optical proximity correction

Data modeling

Calibration

Printing

Bridges

Failure analysis

Visualization

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