Paper
9 November 1999 Quantum scale structures of nanocrystalline silicon films
Hongyi Lin, Yan Na Gao, Bo Liao, Yingzi Guo, Jinghua Liu, Ying Xue Li
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Abstract
Based on the growth process analysis of nanocrystalline silicon films, a fractal growth model named diffusion and reaction limited aggregation (DRLA) model is proposed, which is different from diffusion limited aggregation model. Nanocrystalline silicon films with quantum scale structures were prepared by PECVD method. Computer simulation of the DRLA model has been done, the results are in agreement with the experimental results. The relationship between structure of nanocrystalline silicon film and aggregation of nanocrystalline silicon film has also been discussed.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongyi Lin, Yan Na Gao, Bo Liao, Yingzi Guo, Jinghua Liu, and Ying Xue Li "Quantum scale structures of nanocrystalline silicon films", Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); https://doi.org/10.1117/12.369434
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KEYWORDS
Silicon films

Silicon

Fractal analysis

Chemical species

Diffusion

Motion models

Plasma enhanced chemical vapor deposition

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