Paper
7 July 1997 Experimental results on optical proximity correction with variable-threshold resist model
Nicolas B. Cobb, Avideh Zakhor, Mehran Reihani, Farvardin Jahansooz, Vijaya N.V. Raghavan
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Abstract
In previous work we combined fast aerial image simulation with a closed-loop Optical Proximity Correction (OPC) control system to generate pre-compensated mask geometries which account for pattern transfer distortion effects at small feature sizes. We also presented the variable- threshold resist (VTR) model in which an image-dependent threshold is used to calculate linewidths directly from the image intensity. The model parameters can be determined by `tuning' the model with linewidth measurements from chosen sample sites on the wafer. In this paper, we present verify our OPC approach experimentally by showing after etch SEM wafers of corrected and uncorrected designs. In doing so, we show that (1) OPC can eliminate bridging effects in uncorrected designs, (2) VTR model is fairly insensitive to process variations and (3) mask writing effects are important and cannot be ignored.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicolas B. Cobb, Avideh Zakhor, Mehran Reihani, Farvardin Jahansooz, and Vijaya N.V. Raghavan "Experimental results on optical proximity correction with variable-threshold resist model", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.275977
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CITATIONS
Cited by 33 scholarly publications and 57 patents.
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KEYWORDS
Optical proximity correction

Photomasks

Semiconducting wafers

Statistical modeling

Control systems

Distortion

Etching

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