TLM algorithms for Laplace and Poisson fields in semiconductor transport

Donard de Cogan; A. Chakrabarti; Richard W. Harvey

doi:10.1117/12.224952

16 October 1995 TLM algorithms for Laplace and Poisson fields in semiconductor transport

Donard de Cogan, A. Chakrabarti, Richard W. Harvey

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224952
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

This paper provides an introduction to some novel aspects of the transmission line matrix (TLM) numerical technique with particular reference to the modeling of processes in semiconductor materials and devices. It covers the relative merits of different forms of network representation of physical problems. Current progress with TLM algorithms for the Laplace and Poisson equations is reviewed.

Citation Download Citation

Donard de Cogan, A. Chakrabarti, and Richard W. Harvey "TLM algorithms for Laplace and Poisson fields in semiconductor transport", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224952

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