Measurement and analysis of surface photovoltage of GaAlN material with multi-layer structrues

Jian Liu; Yijun Zhang; Yunsheng Qian

doi:10.1117/12.2692022

6 November 2023 Measurement and analysis of surface photovoltage of GaAlN material with multi-layer structrues

Jian Liu, Yijun Zhang, Yunsheng Qian

Proceedings Volume 12921, Third International Computing Imaging Conference (CITA 2023); 1292155 (2023) https://doi.org/10.1117/12.2692022
Event: Third International Computing Imaging Conference (CITA 2023), 2023, Sydney, Australia

Abstract

Three kinds of transmission type GaAlN photocathode materials with GaAlN activation layer/GaAlN absorber layer/AlN buffer layer/Al₂O₃ substrate layer multi-layer structures with different Al compositions were designed and grown. The thickness of the GaAlN activation layer, the GaAlN absorber layer and the AlN buffers layer of the three samples were 40 nm, 20 nm and 100 nm respectively. The Al fraction of the GaAlN activation layer of the three samples were 0.48, 0.37 and 0.25 respectively, and the Al fraction of GaAlN absorber layer were 0.8, 0.68 and 0.3 respectively. An ultraviolet waveband surface photovoltage testing device was developed for the measurement of the characteristics of surface photovoltage of the three GaAlN photocathode materials. The surface photovoltage amplitude curves of the three samples were basically the same under the two cases of frontal and reverse incidence, and the surface photovoltage signals obtained by the two different light incidence methods were differentiated, and the extreme points of the differentiation curves were obtained near the positions of 4.47 eV, 4.21 eV and 3.92 eV respectively, which correspond to the forbidden band width of the GaAlN material in the activation layer of the three samples. Comparing the surface photovoltage curves before activation with the spectral response curves after activation of two samples, it is found that the surface photovoltage curves before activation and the spectral response curves after activation are highly consistent in characteristics of spectral response and cut-off, which proves the effectiveness of surface photovoltage in the evaluation of characteristics of the spectral response of the GaAlN photocathode materials with multi-layer structures.

Citation Download Citation

Jian Liu, Yijun Zhang, and Yunsheng Qian "Measurement and analysis of surface photovoltage of GaAlN material with multi-layer structrues", Proc. SPIE 12921, Third International Computing Imaging Conference (CITA 2023), 1292155 (6 November 2023); https://doi.org/10.1117/12.2692022

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Spectral response

Aluminum

Quantum efficiency

Light absorption

Photocurrent

Electric fields

Surface plasmons

Show All Keywords

Keywords/Phrases

Search In:

Publication Years