In this paper, a high-power and high-speed modified Uni-Traveling-Carrier photodetector (MUTC-PD) is simulated by using SILVACO TCAD. The MUTC-PD is improved by Gaussian doping in the absorber layer and the cliff layer added. Combined with the influence of energy band, electric field distribution and capacitance, the performance of the device is simulated and analyzed. Through the optimization, a MUTC-PD structure with a response of 0.53A/W, a saturated output current of 305.2 mA and a 3dB bandwidth of 25.1 GHz is obtained.
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