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Low-power high-accuracy micro-digital sun sensor by means of a CMOS image sensor

[+] Author Affiliations
Ning Xie

Chinese Academy of Sciences, Shanghai Institute of Technical Physics, China

Albert J. P. Theuwissen

Delft University of Technology, Instrumentation Laboratory/DIMES, The Netherlands

J. Electron. Imaging. 22(3), 033030 (Sep 20, 2013). doi:10.1117/1.JEI.22.3.033030
History: Received April 17, 2012; Revised April 25, 2013; Accepted July 29, 2013
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Abstract.  A micro-digital sun sensor (μDSS) is a sun detector which senses a satellite’s instant attitude angle with respect to the sun. The core of this sensor is a system-on-chip imaging chip which is referred to as APS+. The APS+ integrates a CMOS active pixel sensor (APS) array of 368×368pixels, a 12-bit analog-to-digital converter, and digital signal processing circuits. The μDSS is designed particularly for microsatellite applications, thus low power consumption is the major design consideration. The APS+ reduces power consumption mainly with profiling and windowing methods which are facilitated by the specific active-pixel design. A prototype of the APS+ which is designed in a standard 0.18-μm CMOS process is presented. The APS+ consumes 21 mW at 10 fps, which is 10 times less than the state of the art. In order to improve noise performance, a reset noise reduction method, quadruple sampling (QS), is implemented. QS reduces the effect of the reset noise compared to the conventional delta double sampling method, even in a 3-transistor active pixel structure. The APS+ obtains an accuracy of 0.01 deg with the QS method.

© 2013 SPIE and IS&T

Citation

Ning Xie and Albert J. P. Theuwissen
"Low-power high-accuracy micro-digital sun sensor by means of a CMOS image sensor", J. Electron. Imaging. 22(3), 033030 (Sep 20, 2013). ; http://dx.doi.org/10.1117/1.JEI.22.3.033030


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