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Field-programmable gate array-based hardware architecture for image processing with complementary metal-oxide-semiconductor image sensor

[+] Author Affiliations
Zhiwei Ge

Tianjin University, School of Electronic and Information Engineering, Tianjin, China

Suying Yao

Tianjin University, School of Electronic and Information Engineering, Tianjin, China

Jiangtao Xu

Tianjin University, School of Electronic and Information Engineering, Tianjin, China

J. Electron. Imaging. 19(3), 033014 (August 31, 2010). doi:10.1117/1.3483904
History: Received March 02, 2009; Revised May 19, 2010; Accepted July 08, 2010; Published August 31, 2010; Online August 31, 2010
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We present a field-programmable gate array (FPGA)-based hardware architecture for image processing as well as novel algorithms for fast autoexposure control and color filter array (CFA) demosaicing utilizing a CMOS image sensor (CIS). The proposed hardware architecture includes basic color processing functions of black-level correction, noise reduction, autoexposure control, auto-white-balance adjustment, CFA demosaicing, and gamma correction while applying advanced peripheral bus architecture to implement the hardware architecture. The speed of traditional autoexposure control algorithms to reach a proper exposure level is so slow that it is necessary to develop a fast autoexposure control method. Based on the optical-electrical characteristics of the CIS, we present a fast auto-exposure-control algorithm that can guarantee speed and accuracy. To ensure the peak SNR performance of the demosaiced images of the CIS and reduce the computational cost at the same time, the proposed demosaicing algorithm improves on the adaptive edge-sensitive algorithm and the fuzzy assignment algorithm. The experimental results show that the proposed hardware architecture works well on the FPGA development board and produces better quality images.

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Citation

Zhiwei Ge ; Suying Yao and Jiangtao Xu
"Field-programmable gate array-based hardware architecture for image processing with complementary metal-oxide-semiconductor image sensor", J. Electron. Imaging. 19(3), 033014 (August 31, 2010). ; http://dx.doi.org/10.1117/1.3483904


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