Special Section on Quality Control by Artificial Vision

Retina for pattern matching in standard 0.6-μm complementary metal oxide semiconductor technology

[+] Author Affiliations
Olivier Aubreton, Benaissa Bellach, Lew F. C. Lew Yan Voon, Bernard Lamalle, Patrick Gorria

University of Bourgogne I.U.T. Le Creusot Laboratoire LE2I, 12, rue de la Fonderie, 71200 Le Creusot, France E-mail: o.aubreton@iutlecreusot.u-bourgogne.fr

Guy Cathe´bras

Universite´ Montpellier II LIRMM, 161, rue Ada, 34392 Montpellier Cedex 5, France

J. Electron. Imaging. 13(3), 559-569 (Jul 01, 2004). doi:10.1117/1.1762886
History: Received Sep. 5, 2003; Accepted Mar. 2, 2004; Online July 29, 2004
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We present a silicon retina fabricated in standard CMOS 0.6-μm technology. The goal of the sensor is to determine whether or not two images are similar. An image known as the reference image is first used during a programming phase to classify the pixels into two zones that correspond to, respectively, the bright and dark pixels of the reference image. Next, an image is analyzed and the values of the pixels of each zone are summed to produce two signals denoted by Sn and Sb at the outputs of the circuit. If the image under analysis is different from the reference image, then the values of these two signals will also be different from those obtained with the reference image. Our circuit thus implements a pattern matching operation that allows us to determine the similarity between two images using the Sb/Sn plane. The architecture of the sensor is described, and both the simulation and the experimental results are given. Moreover, our pattern-matching operator is compared to the normalized correlation operator commonly used in pattern matching, and its performance is discussed. Finally, we present an example of the application of the sensor. © 2004 SPIE and IS&T.

© 2004 SPIE and IS&T

Citation

Olivier Aubreton ; Benaissa Bellach ; Lew F. C. Lew Yan Voon ; Bernard Lamalle ; Patrick Gorria, et al.
"Retina for pattern matching in standard 0.6-μm complementary metal oxide semiconductor technology", J. Electron. Imaging. 13(3), 559-569 (Jul 01, 2004). ; http://dx.doi.org/10.1117/1.1762886


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